中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fully Coupled Multiphysics Simulation of Crosstalk Effect in Bipolar Resistive Random Access Memory

文献类型:期刊论文

作者Li, Shichao; Chen, Wenchao; Luo, Yandong; Hu, Jun; Gao, Pingqi; Ye, Jichun; Kang, Kai; Chen, Hongsheng; Li, Erping; Yin, Wen-Yan
刊名IEEE TRANSACTIONS ON ELECTRON DEVICES
出版日期2017
卷号64期号:9页码:3647-3653
ISSN号0018-9383
英文摘要A versatile multiphysics simulation packet for investigating different resistive random acces memories (RRAMs) is developed in this paper. Heat transfer, electrical conduction, and ion migration in such heterogeneous structure are all taken into consideration. Three fully coupled partial differential equations are solved using our self-developed finite-difference algorithm, where Scharfetter-Gummel method is adopted to simulate ion migration with fast convergence achieved. This packet is validated in comparison with the commercial software based on the finite-element method. With its implementation, complete and clear pictures for crosstalk effect in vertically integrated RRAM are captured and compared, where the effects of key physical and geometrical factors are characterized and understood. Some useful suggestions to mitigate its unfavorable influences are given.
公开日期2017-12-25
源URL[http://ir.nimte.ac.cn/handle/174433/13662]  
专题2017专题
推荐引用方式
GB/T 7714
Li, Shichao,Chen, Wenchao,Luo, Yandong,et al. Fully Coupled Multiphysics Simulation of Crosstalk Effect in Bipolar Resistive Random Access Memory[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2017,64(9):3647-3653.
APA Li, Shichao.,Chen, Wenchao.,Luo, Yandong.,Hu, Jun.,Gao, Pingqi.,...&Yin, Wen-Yan.(2017).Fully Coupled Multiphysics Simulation of Crosstalk Effect in Bipolar Resistive Random Access Memory.IEEE TRANSACTIONS ON ELECTRON DEVICES,64(9),3647-3653.
MLA Li, Shichao,et al."Fully Coupled Multiphysics Simulation of Crosstalk Effect in Bipolar Resistive Random Access Memory".IEEE TRANSACTIONS ON ELECTRON DEVICES 64.9(2017):3647-3653.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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