Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films
文献类型：期刊论文
| 作者 | Xue, Wuhong; Shang, Jie; Ji, Zhenghui; Liu, Gang; Niu, Xuhong; Yi, Xiaohui; Pan, Liang; Zhan, Qingfeng; Xu, Xiao-Hong; Li, Run-Wei |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2017 |
| 卷号 | 9期号:21页码:7037-7046 |
| ISSN号 | 2040-3364 |
| 英文摘要 | Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nano-crystalline hafnium oxide thin film is fabricated, an all-oxide based transparent RRAM device with stable resistive switching behavior that can withstand a mechanical tensile stress of up to 2.12% is obtained. It is demonstrated that the superior electrical, thermal and mechanical performance of the ITO/HfOx/ITO device can be ascribed to the formation of pseudo-straight metallic hafnium conductive filaments in the switching layer, and is only limited by the choice of electrode materials. When the ITO bottom electrode is replaced with platinum metal, the mechanical failure threshold of the device can be further extended. |
| 公开日期 | 2017-12-25 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/13781]  |
| 专题 | 2017专题 |
| 推荐引用方式 GB/T 7714 | Xue, Wuhong,Shang, Jie,Ji, Zhenghui,et al. Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films[J]. NANOSCALE,2017,9(21):7037-7046. |
| APA | Xue, Wuhong.,Shang, Jie.,Ji, Zhenghui.,Liu, Gang.,Niu, Xuhong.,...&Li, Run-Wei.(2017).Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.NANOSCALE,9(21),7037-7046. |
| MLA | Xue, Wuhong,et al."Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films".NANOSCALE 9.21(2017):7037-7046. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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