中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fully solution-processed metal oxide thin-film transistors via a low temperature aqueous route

文献类型:期刊论文

作者Liang, Lingyan; Zhu, Deliang; Xu, Jian-Bin; Xu, Wangying; Long, Mingzhu; Zhang, Tiankai; Cao, Hongtao
刊名CERAMICS INTERNATIONAL
出版日期2017
卷号43期号:8页码:6130-6137
ISSN号0272-8842
英文摘要We report a facile and low-temperature aqueous route for the fabrication of various oxide thin films (Al2O3, In2O3 and InZnO). A detail study is carried out to reveal the formation and properties of these sol-gel-derived thin films. The results show that the water-based oxide thin films undergo the decomposition of nitrate group as well as conversion of metal hydroxides to form metal oxide framework. High quality oxide thin film could be achieved at low temperature by this aqueous route. Furthermore, these oxide thin films are integrated to form thin-film transistors (TFTs) and the electrical performance is systematically studied. In particular, we successfully demonstrate In2O3/Al2O3 TFTs with high mobility of 30.88 cm(2) V-1 s(-1) and low operation voltage of 4 V at a maximum processing temperature of 250 degrees C.
公开日期2017-12-25
源URL[http://ir.nimte.ac.cn/handle/174433/13811]  
专题2017专题
推荐引用方式
GB/T 7714
Liang, Lingyan,Zhu, Deliang,Xu, Jian-Bin,et al. Fully solution-processed metal oxide thin-film transistors via a low temperature aqueous route[J]. CERAMICS INTERNATIONAL,2017,43(8):6130-6137.
APA Liang, Lingyan.,Zhu, Deliang.,Xu, Jian-Bin.,Xu, Wangying.,Long, Mingzhu.,...&Cao, Hongtao.(2017).Fully solution-processed metal oxide thin-film transistors via a low temperature aqueous route.CERAMICS INTERNATIONAL,43(8),6130-6137.
MLA Liang, Lingyan,et al."Fully solution-processed metal oxide thin-film transistors via a low temperature aqueous route".CERAMICS INTERNATIONAL 43.8(2017):6130-6137.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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