Naphthothiadiazole-Based Near-Infrared Emitter with a Photoluminescence Quantum Yield of 60% in Neat Film and External Quantum Efficiencies of up to 3.9% in Nondoped OLEDs
文献类型：期刊论文
| 作者 | Liu, Tengxiao; Zhu, Liping; Zhong, Cheng; Xie, Guohua; Gong, Shaolong; Fang, Junfeng; Ma, Dongge; Yang, Chuluo |
| 刊名 | ADVANCED FUNCTIONAL MATERIALS
 |
| 出版日期 | 2017 |
| 卷号 | 27期号:12页码:1606384 |
| ISSN号 | 1616-301X |
| 英文摘要 | Fluorescent emitters have regained intensive attention in organic light emitting diode (OLED) community owing to the breakthrough of the device efficiency and/or new emitting mechanism. This provides a good chance to develop new near-infrared (NIR) fluorescent emitter and high-efficiency device. In this work, a D-p-A-p-D type compound with naphthothiadiazole as acceptor, namely, 4,4'-(naphtho[2,3-c][1,2,5] thiadiazole-4,9-diyl) bis(N,N-diphenylaniline) (NZ2TPA), is designed and synthesized. The photophysical study and density functional theory analysis reveal that the emission of the compound has obvious hybridized local and charge-transfer (HLCT) state feature. In addition, the compound shows aggregation-induced emission (AIE) characteristic. Attributed to its HLCT mechanism and AIE characteristic, NZ2TPA acquires an unprecedentedly high photoluminescent quantum yield of 60% in the neat film, which is the highest among the reported organic small-molecule NIR emitters and even exceeds most phosphorescent NIR materials. The nondoped devices based on NZ2TPA exhibit excellent performance, achieving a maximum external quantum efficiency (EQE) of 3.9% with the emission peak at 696 nm and a high luminance of 6330 cd m(-2), which are among the highest in the reported nondoped NIR fluorescent OLEDs. Moreover, the device remains a high EQE of 2.8% at high brightness of 1000 cd m(-2), with very low efficiency roll-off. |
| 公开日期 | 2017-12-25 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/13927]  |
| 专题 | 2017专题 |
| 推荐引用方式 GB/T 7714 | Liu, Tengxiao,Zhu, Liping,Zhong, Cheng,et al. Naphthothiadiazole-Based Near-Infrared Emitter with a Photoluminescence Quantum Yield of 60% in Neat Film and External Quantum Efficiencies of up to 3.9% in Nondoped OLEDs[J]. ADVANCED FUNCTIONAL MATERIALS,2017,27(12):1606384. |
| APA | Liu, Tengxiao.,Zhu, Liping.,Zhong, Cheng.,Xie, Guohua.,Gong, Shaolong.,...&Yang, Chuluo.(2017).Naphthothiadiazole-Based Near-Infrared Emitter with a Photoluminescence Quantum Yield of 60% in Neat Film and External Quantum Efficiencies of up to 3.9% in Nondoped OLEDs.ADVANCED FUNCTIONAL MATERIALS,27(12),1606384. |
| MLA | Liu, Tengxiao,et al."Naphthothiadiazole-Based Near-Infrared Emitter with a Photoluminescence Quantum Yield of 60% in Neat Film and External Quantum Efficiencies of up to 3.9% in Nondoped OLEDs".ADVANCED FUNCTIONAL MATERIALS 27.12(2017):1606384. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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