Carrier trapping anisotropy in ambipolar SnO thin-film transistors
文献类型：期刊论文
| 作者 | Liang, Lingyan; Luo, Hao; Cao, Hongtao |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2017 |
| 卷号 | 129页码:88-92 |
| ISSN号 | 0038-1101 |
| 英文摘要 | The anisotropic carrier trapping behaviors was demonstrated for ambipolar tin monoxide (SnO) thin-film transistors (TFTs). On one hand, the TFTs exhibited good stability with almost no changes in transfer characteristics under negative gate-bias stress (NGBS). On the other, under positive gate-bias stress (PGBS), the transfer curves presented parallel and positive shift with no degradation in field-effect mobility and subthreshold voltage swing. The stress-time evolution of the turn-on voltage shift, induced by different positive stress voltages and temperatures, could be described by the stretched exponential model. The relaxation time was extracted to be 1.6 X 10(4) s at room temperature with activation energy of 0.43 eV, indicating that the ambipolar SnO TFTs under PGBS approach the stability of amorphous indium-gallium-zinc oxide based TFTs. (C) 2017 Elsevier Ltd. All rights reserved. |
| 公开日期 | 2017-12-25 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/13960]  |
| 专题 | 2017专题 |
| 推荐引用方式 GB/T 7714 | Liang, Lingyan,Luo, Hao,Cao, Hongtao. Carrier trapping anisotropy in ambipolar SnO thin-film transistors[J]. SOLID-STATE ELECTRONICS,2017,129:88-92. |
| APA | Liang, Lingyan,Luo, Hao,&Cao, Hongtao.(2017).Carrier trapping anisotropy in ambipolar SnO thin-film transistors.SOLID-STATE ELECTRONICS,129,88-92. |
| MLA | Liang, Lingyan,et al."Carrier trapping anisotropy in ambipolar SnO thin-film transistors".SOLID-STATE ELECTRONICS 129(2017):88-92. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。