Coexistence of two types of metal filaments in oxide memristors
文献类型：期刊论文
| 作者 | Long, W. M.; Xu, D.; Shangguan, X. N.; Wang, S. M.; Cao, H. T.; Liang, L. Y.; Zhuge, F.; Zhang, H. L.; Gao, J. H.; Wang, J. R. |
| 刊名 | AIP ADVANCES
 |
| 出版日期 | 2017 |
| 卷号 | 7期号:2页码:25102 |
| ISSN号 | 2158-3226 |
| 英文摘要 | One generally considers the conducting filament in ZnO-based valence change memristors (VCMs) as an aggregation of oxygen vacancies. Recently, the transmission electron microscopy observation showed the filament is composed of a Zn-dominated ZnOx. In this study, careful analysis of the temperature dependence of the ON state resistance demonstrates that the formation/rupture of a Zn filament is responsible for the resistive switching in ZnO VCMs. Cu/ZnO/Pt memristive devices can be operated in both VCM and ECM (electrochemical metallization memristor) modes by forming different metal filaments including Cu, Zn and a coexistence of these two filaments. The device operation can be reversibly switched between ECM and VCM modes. The dual mode operation capability of Cu/ZnO/Pt provides a wide choice of select devices for constructing memristive crossbar architectures. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license |
| 公开日期 | 2017-12-25 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/14012]  |
| 专题 | 2017专题 |
| 推荐引用方式 GB/T 7714 | Long, W. M.,Xu, D.,Shangguan, X. N.,et al. Coexistence of two types of metal filaments in oxide memristors[J]. AIP ADVANCES,2017,7(2):25102. |
| APA | Long, W. M..,Xu, D..,Shangguan, X. N..,Wang, S. M..,Cao, H. T..,...&Wang, J. R..(2017).Coexistence of two types of metal filaments in oxide memristors.AIP ADVANCES,7(2),25102. |
| MLA | Long, W. M.,et al."Coexistence of two types of metal filaments in oxide memristors".AIP ADVANCES 7.2(2017):25102. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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