中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides

文献类型:期刊论文

作者Chun, Byong Sun; Xu, Hongjun; Hsu, Ming-Chien; Fuh, Huei-Ru; Feng, Jiafeng; Han, Xiufeng; Zhao, Yanfeng; Zhang, Duan; Wang, Xinming; Liu, Fang
刊名JOURNAL OF MATERIALS CHEMISTRY C
出版日期2018
卷号6期号:12页码:3058-3064
关键词Vanadium Disulfide Nanosheets 2-dimensional Electron-gas Negative Magnetoresistance Giant Magnetoresistance Anderson Localization Absence Dimensions Ferromagnetism Diffusion Graphene
英文摘要Recently many novel magnetoresistance (MR) phenomena have been reported from studies of two dimensional (2D) materials. Here, we report on the exotic transport behavior of VS2. A large negative and quadratic MR of -10% is observed for an in-plane magnetic field B up to 14 T. Remarkably, when the applied field deviates from the in-plane orientation there is a threshold field, B-c, and the MR shows a plateau of near zero MR. When B < B-c, only a single state exists and the transition between quantum spin states is forbidden. Our work sheds new light on the MR of magnetic 2D materials with localized states and may spur further investigations.
学科主题Materials Science ; Physics
语种英语
公开日期2018-12-04
源URL[http://ir.nimte.ac.cn/handle/174433/16743]  
专题2018专题
推荐引用方式
GB/T 7714
Chun, Byong Sun,Xu, Hongjun,Hsu, Ming-Chien,et al. Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides[J]. JOURNAL OF MATERIALS CHEMISTRY C,2018,6(12):3058-3064.
APA Chun, Byong Sun.,Xu, Hongjun.,Hsu, Ming-Chien.,Fuh, Huei-Ru.,Feng, Jiafeng.,...&Chang, Ching-Ray.(2018).Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides.JOURNAL OF MATERIALS CHEMISTRY C,6(12),3058-3064.
MLA Chun, Byong Sun,et al."Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides".JOURNAL OF MATERIALS CHEMISTRY C 6.12(2018):3058-3064.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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