Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing
文献类型：期刊论文
| 作者 | Lu, Ziyu; Zhang, Sheng; Sheng, Jiang; Gao, Pingqi; Chen, Qixian; Peng, Zhijian; Wu, Sudong; Ye, Jichun |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2018 |
| 卷号 | 486页码:142-147 |
| 关键词 | Chemical-vapor-deposition High-rate Epitaxy Thermal-conductivity Plasma-jet Si Films Pressure Cvd |
| 英文摘要 | A rapid and low temperature crystallization of amorphous silicon (a-Si) films by Ar-H-2 mesoplasma annealing is demonstrated. The high thermal kinetic energy of mesoplasma leads to the fast crystallization process and a nanocrystalline Si film with a high crystalline fraction can be obtained within a few seconds at a temperature less than 600 degrees C. The atomic H in mesoplasma environment with a high number density enhances the crystallization process through an H diffusion-induced chemical annealing apart from the thermal effect. The recrystallization process of a-Si film by mesoplasma annealing is demonstrated. (C) 2018 Elsevier B.V. All rights reserved. |
| 学科主题 | Crystallography ; Materials Science ; Physics |
| 语种 | 英语 |
| 公开日期 | 2018-12-04 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/16758]  |
| 专题 | 2018专题 |
| 推荐引用方式 GB/T 7714 | Lu, Ziyu,Zhang, Sheng,Sheng, Jiang,et al. Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing[J]. JOURNAL OF CRYSTAL GROWTH,2018,486:142-147. |
| APA | Lu, Ziyu.,Zhang, Sheng.,Sheng, Jiang.,Gao, Pingqi.,Chen, Qixian.,...&Ye, Jichun.(2018).Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing.JOURNAL OF CRYSTAL GROWTH,486,142-147. |
| MLA | Lu, Ziyu,et al."Rapid crystallization of amorphous silicon films utilizing Ar-H-2 mesoplasma annealing".JOURNAL OF CRYSTAL GROWTH 486(2018):142-147. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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