Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures
文献类型：期刊论文
| 作者 | Bo, Baoxue; Li, Junmei; Guo, Wei; Jiang, Jie'an; Gao, Pingqi; Ye, Jichun |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2018 |
| 卷号 | 57期号:3 |
| 关键词 | Light-emitting-diodes Single-crystal Gan Thin-films Photodetectors Heterojunction |
| 英文摘要 | We report the fabrication of a NiO thin film on top of an n-type GaN epitaxial layer. The electron-blocking capability of NiO in a hybrid organic/inorganic heterostructure consisting of n-GaN/NiO/poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) is discussed. Surface morphology, crystallography orientation, bandgap, and fermi level information of NiO films were investigated in detail. A rectifying property consistent with the proposed band diagram was observed in the current-voltage measurement. Theoretical analysis also demonstrated the effective electron blocking due to band alignment and a more balanced carrier distribution inside the GaN region with NiO inserted into the n-GaN/PEDOT: PSS heterostructure. This work provides a promising approach to the fabrication of high-efficiency hybrid optoelectronic devices. (C) 2018 The Japan Society of Applied Physics |
| 学科主题 | Engineering ; Polymer Science |
| 语种 | 英语 |
| 公开日期 | 2018-12-04 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/16790]  |
| 专题 | 2018专题 |
| 推荐引用方式 GB/T 7714 | Bo, Baoxue,Li, Junmei,Guo, Wei,et al. Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2018,57(3). |
| APA | Bo, Baoxue,Li, Junmei,Guo, Wei,Jiang, Jie'an,Gao, Pingqi,&Ye, Jichun.(2018).Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures.JAPANESE JOURNAL OF APPLIED PHYSICS,57(3). |
| MLA | Bo, Baoxue,et al."Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures".JAPANESE JOURNAL OF APPLIED PHYSICS 57.3(2018). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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