Improving Unipolar Resistive Switching Uniformity with Cone Shaped Conducting Filaments and Its Logic-In-Memory Application
文献类型：期刊论文
| 作者 | Yang, Huali; Liu, Gang; Chen, Qilai; Xue, Wuhong; Shang, Jie; Chen, Bin; Zeng, Fei; Song, Cheng; Pan, Feng; Li, Run-Wei |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:7页码:6453-6462 |
| 关键词 | Memristive Devices Boolean Logic Nanofilament Mechanism Realization Challenges Operations Evolution Selector Graphene |
| 英文摘要 | Resistive random access memory (RRAM) with inherent logic-in-memory capability exhibits great potential to construct beyond von-Neumann computers. Particularly, unipolar RRAM is more promising because its single polarity operation enables large-scale crossbar logic-in-memory circuits with the highest integration density and simpler peripheral control circuits. However, unipolar RRAM usually exhibits poor switching uniformity because of random activation of conducting filaments and consequently cannot meet the strict uniformity requirement for logic-in-memory application. In this contribution, a new methodology that constructs cone-shaped conducting filaments by using chemically a active metal cathode is proposed to improve unipolar switching uniformity. Such a peculiar metal cathode will react spontaneously with the oxide switching layer to form an interfacial layer, which together with the metal cathode itself can act as a load resistor to prevent the overgrowth of conducting filaments and thus make them more cone like. In this way, the rupture of conducting filaments can be strictly limited to the tip region, making their residual parts favorable locations for subsequent filament growth and thus suppressing their random regeneration. As such, a novel "one switch + one unipolar RRAM cell" hybrid structure is capable to realize all 16 Boolean logic functions for large-scale logic-in-memory circuits. |
| 学科主题 | Chemistry |
| 语种 | 英语 |
| 公开日期 | 2018-12-04 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/16801]  |
| 专题 | 2018专题 |
| 推荐引用方式 GB/T 7714 | Yang, Huali,Liu, Gang,Chen, Qilai,et al. Improving Unipolar Resistive Switching Uniformity with Cone Shaped Conducting Filaments and Its Logic-In-Memory Application[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(7):6453-6462. |
| APA | Yang, Huali.,Liu, Gang.,Chen, Qilai.,Xue, Wuhong.,Shang, Jie.,...&Gao, Shuang.(2018).Improving Unipolar Resistive Switching Uniformity with Cone Shaped Conducting Filaments and Its Logic-In-Memory Application.ACS APPLIED MATERIALS & INTERFACES,10(7),6453-6462. |
| MLA | Yang, Huali,et al."Improving Unipolar Resistive Switching Uniformity with Cone Shaped Conducting Filaments and Its Logic-In-Memory Application".ACS APPLIED MATERIALS & INTERFACES 10.7(2018):6453-6462. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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