中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes

文献类型:期刊论文

作者Zhang, Shaozheng; Yang, Jianhui; Wang, Anping; Wang, Ruining; Wang, Chuan-Kui; Zhang, Guang-Ping; Chen, Liang
刊名NANOSCALE
出版日期2018
卷号10期号:41页码:19492-19497
关键词Magnetic Tunnel-junctions Transition Ferromagnetism Crystals Carbides
英文摘要Developing effective magnetoresistance devices has become beneficial due to their extensive applications in electronics such as data storage. One challenge is to reduce the scale of devices while maintaining a high magnetoresistance. Another challenge for the applications of magnetoresistance devices involves synthesizing them with stable interfaces. Antiferromagnetic Cr-based MXenes are similar to tunneling magnetoresistance junctions, and can be synthesized in a straightforward manner. Density functional theory calculations show that the medium adhesion strength between Au electrodes and Cr-based MXene can ensure the formation of stable interfaces. Exchange coupling between Cr atoms in different atomic layers is found to decrease to 0.4 meV with increasing thickness. Magnetoresistance values are higher than 400% with 1.0 V. The results show that Cr-based MXenes are promising magnetoresistance devices with high magnetoresistance values and ultra-thin layers (about 1 nm) and exhibit tunable exchange coupling between Cr atoms through thickness control.
学科主题Physics
语种英语
公开日期2018-12-04
源URL[http://ir.nimte.ac.cn/handle/174433/17038]  
专题2018专题
推荐引用方式
GB/T 7714
Zhang, Shaozheng,Yang, Jianhui,Wang, Anping,et al. High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes[J]. NANOSCALE,2018,10(41):19492-19497.
APA Zhang, Shaozheng.,Yang, Jianhui.,Wang, Anping.,Wang, Ruining.,Wang, Chuan-Kui.,...&Chen, Liang.(2018).High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes.NANOSCALE,10(41),19492-19497.
MLA Zhang, Shaozheng,et al."High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes".NANOSCALE 10.41(2018):19492-19497.

入库方式: OAI收割

来源:宁波材料技术与工程研究所

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