High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes
文献类型:期刊论文
作者 | Yang, Jianhui; Zhang, Guang-Ping; Wang, Chuan-Kui; Chen, Liang; Wang, Ruining; Wang, Anping; Zhang, Shaozheng |
刊名 | NANOSCALE
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出版日期 | 2018 |
卷号 | 10期号:41页码:19492-19497 |
关键词 | Magnetic Tunnel-junctions Transition Ferromagnetism Crystals Carbides |
英文摘要 | Developing effective magnetoresistance devices has become beneficial due to their extensive applications in electronics such as data storage. One challenge is to reduce the scale of devices while maintaining a high magnetoresistance. Another challenge for the applications of magnetoresistance devices involves synthesizing them with stable interfaces. Antiferromagnetic Cr-based MXenes are similar to tunneling magnetoresistance junctions, and can be synthesized in a straightforward manner. Density functional theory calculations show that the medium adhesion strength between Au electrodes and Cr-based MXene can ensure the formation of stable interfaces. Exchange coupling between Cr atoms in different atomic layers is found to decrease to 0.4 meV with increasing thickness. Magnetoresistance values are higher than 400% with 1.0 V. The results show that Cr-based MXenes are promising magnetoresistance devices with high magnetoresistance values and ultra-thin layers (about 1 nm) and exhibit tunable exchange coupling between Cr atoms through thickness control. |
学科主题 | Physics |
语种 | 英语 |
公开日期 | 2018-12-04 |
源URL | [http://ir.nimte.ac.cn/handle/174433/17039] ![]() |
专题 | 2018专题 |
推荐引用方式 GB/T 7714 | Yang, Jianhui,Zhang, Guang-Ping,Wang, Chuan-Kui,et al. High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes[J]. NANOSCALE,2018,10(41):19492-19497. |
APA | Yang, Jianhui.,Zhang, Guang-Ping.,Wang, Chuan-Kui.,Chen, Liang.,Wang, Ruining.,...&Zhang, Shaozheng.(2018).High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes.NANOSCALE,10(41),19492-19497. |
MLA | Yang, Jianhui,et al."High magnetoresistance in ultra-thin two-dimensional Cr-based MXenes".NANOSCALE 10.41(2018):19492-19497. |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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