Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Huan, Ya-Wei; Wang, Xing-Lu; Liu, Wen-Jun; Dong, Hong; Long, Shi-Bing; Sun, Shun-Ming; Yang, Jian-Guo; Wu, Su-Dong; Yu, Wen-Jie; Horng, Ray-Hua |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2018 |
| 卷号 | 57期号:10 |
| 关键词 | Beta-ga2o3 Single-crystals Ohmic Contacts Offsets Heterostructures Valence Growth Edge |
| 英文摘要 | The energy band offsets between indium-gallium-zinc oxide (IGZO) and beta-Ga2O3 were examined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The Ga 2p spectra from the heterojunction contributed by the upper IGZO film and the beta-Ga2O3 substrate were deconvoluted into two sub-peaks with the binding energy difference of 0.3 eV, in good agreement with the theoretical model. Meanwhile, the bandgaps of IGZO and beta-Ga2O3 were measured to be 3.44 +/- 0.1 and 4.64 +/- 0.1 eV from the ultraviolet-visible (UV-vis) transmittance spectra. The valence and conduction band offsets between the IGZO and beta-Ga2O3 were consequently determined to be 0.49 +/- 0.05 and 0.71 +/- 0.1 eV, respectively. These findings reveal that IGZO is an attractive intermediate semiconductor layer (ISL) for reducing the electron barrier height at metal/Ga2O3 interfaces. (C) 2018 The Japan Society of Applied Physics |
| 学科主题 | Physics |
| 语种 | 英语 |
| 公开日期 | 2018-12-04 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/17153]  |
| 专题 | 2018专题 |
| 推荐引用方式 GB/T 7714 | Huan, Ya-Wei,Wang, Xing-Lu,Liu, Wen-Jun,et al. Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2018,57(10). |
| APA | Huan, Ya-Wei.,Wang, Xing-Lu.,Liu, Wen-Jun.,Dong, Hong.,Long, Shi-Bing.,...&Zhang, David Wei.(2018).Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy.JAPANESE JOURNAL OF APPLIED PHYSICS,57(10). |
| MLA | Huan, Ya-Wei,et al."Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy".JAPANESE JOURNAL OF APPLIED PHYSICS 57.10(2018). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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