Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier
文献类型：期刊论文
| 作者 | Desfeux, Rachel; Li, Xiaoguang; Migot, Sylvie; Chaudhuri, Debapriya; Yang, Hongxin; Chshiev, Mairbek; Yang, Changping; Zhou, Bin; Mangin, Stephane; Liang, Shiheng |
| 刊名 | ACS APPLIED MATERIALS & INTERFACES
 |
| 出版日期 | 2018 |
| 卷号 | 10期号:36页码:30614-30622 |
| 关键词 | Nonvolatile Memory Spinterface Valves Films Semiconductors Storage Polymer Devices |
| 英文摘要 | The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized in the organic multiferroic tunnel junctions (OMFTJs) and gained intensive interests for future multifunctional organic spintronic applications. Here, we report the evidence of ferroelectric "ailing channel" in the organic barrier, which can effectively pin the ferroelectric domain, resulting in nonswitchable spin polarization at the FM/FE-Org interface. In particular, OMFTJs based on La0.6Sr0.4MnO3/P(VDF-TrFE) (t)/Co/Au structures with different P(VDF-TrFE) thickness (t) were fabricated. The combined advanced electron microscopy and spectroscopy studies clearly reveal that very limited Co diffusion exists in the P(VDF-TrFE) organic barrier when the Au/Co electrode is deposited around 80K. Pot-hole structures at the boundary between the P(VDFTrFE) needle-like grains are evidenced to induce "ailing-channels" that hinder efficient ferroelectric polarization of the organic barrier and result in the quenching of the spin polarization switching at Co/P(VDF-TrFE) interface. Furthermore, the spin diffusion length in the negatively polarized P(VDF-TrFE) is measured to be about 7.2 nm at 20K. The evidence of the mechanism of ferroelectric "ailing-channels" is of essential importance to improve the performance of OMFTJ and master the key condition for an efficient ferroelectric control of the spin polarization of "spinterface". |
| 学科主题 | Physics |
| 语种 | 英语 |
| 公开日期 | 2018-12-04 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/17204]  |
| 专题 | 2018专题 |
| 推荐引用方式 GB/T 7714 | Desfeux, Rachel,Li, Xiaoguang,Migot, Sylvie,et al. Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10(36):30614-30622. |
| APA | Desfeux, Rachel.,Li, Xiaoguang.,Migot, Sylvie.,Chaudhuri, Debapriya.,Yang, Hongxin.,...&Lu, Yuan.(2018).Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier.ACS APPLIED MATERIALS & INTERFACES,10(36),30614-30622. |
| MLA | Desfeux, Rachel,et al."Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric "Ailing-Channel" in Organic Barrier".ACS APPLIED MATERIALS & INTERFACES 10.36(2018):30614-30622. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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