Solution-processed Ga-Cd-O thin-films with tunable bandgaps and their transistors
文献类型:期刊论文
作者 | Yao, Zhiqiang; Liang, Lingyan; Liang, Yu; Wu, Weihua; Song, Anran; Yu, Jingjing; Chang, Ting-Chang; Lan, Linfeng; Cao, Hongtao |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
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出版日期 | 2018 |
卷号 | 51期号:33 |
关键词 | Amorphous Oxide Semiconductors Temperature Phototransistor Responsivity Transport Displays |
英文摘要 | Ga-Cd-O (GCO) thin films with different Ga contents were fabricated based on a solution-processed method. The direct optical bandgap of GCO films is changed from 2.89 to 4.53 eV with the Ga-content from 30% to 100% and their relationship agrees well with a second-order equation. The Raman spectra of GCO are dominated by three main features: a relatively sharp peak at similar to 260 cm(-1) and two broad features at similar to 405 and 949 cm(-1), and their variations with the Ga-content are analyzed associated with their phonon mode assignment. Moreover, thin-film transistors using the GCO channels all exhibit n-type transistor characteristics and the evolution of their key electrical parameters with the Ga-content is well elucidated by the structural and morphological properties. A saturation field-effect mobility of 5.1 cm(2) V-1 s(-1), on/off current ratio of 2.1 x 10(7), subthreshold slop of 0.83 V/dec, and threshold voltage of -6.8 V were achieved by the 50% Ga-content device. |
学科主题 | Materials Science ; Physics |
语种 | 英语 |
公开日期 | 2018-12-04 |
源URL | [http://ir.nimte.ac.cn/handle/174433/17252] ![]() |
专题 | 2018专题 |
推荐引用方式 GB/T 7714 | Yao, Zhiqiang,Liang, Lingyan,Liang, Yu,et al. Solution-processed Ga-Cd-O thin-films with tunable bandgaps and their transistors[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(33). |
APA | Yao, Zhiqiang.,Liang, Lingyan.,Liang, Yu.,Wu, Weihua.,Song, Anran.,...&Cao, Hongtao.(2018).Solution-processed Ga-Cd-O thin-films with tunable bandgaps and their transistors.JOURNAL OF PHYSICS D-APPLIED PHYSICS,51(33). |
MLA | Yao, Zhiqiang,et al."Solution-processed Ga-Cd-O thin-films with tunable bandgaps and their transistors".JOURNAL OF PHYSICS D-APPLIED PHYSICS 51.33(2018). |
入库方式: OAI收割
来源:宁波材料技术与工程研究所
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