Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Atomic-Layer Stacking, Insulator Capping and Electric Field
文献类型：期刊论文
| 作者 | Cros, Vincent; Yang, Hongxin; Fert, Albert; Chshiev, Mairbek; Boulle, Olivier |
| 刊名 | SCIENTIFIC REPORTS
 |
| 出版日期 | 2018 |
| 卷号 | 8 |
| 关键词 | Magnetic Skyrmions Domain-walls Weak Ferromagnetism Spin-torque Dynamics Surfaces Exchange Lattice Metals Driven |
| 英文摘要 | Using first-principles calculations, we demonstrate several approaches to control Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin films with perpendicular magnetic anisotropy. First, we find that DMI is significantly enhanced when the ferromagnetic (FM) layer is sandwiched between nonmagnetic (NM) layers inducing additive DMI in NM1/FM/NM2 structures. For instance, when two NM layers are chosen to induce DMI of opposite chirality in Co, e.g. NM1 representing Au, Ir, Al or Pb, and NM2 being Pt, the resulting DMI in NM1/Co/Pt trilayers is enhanced compared to Co/Pt bilayers. Moreover, DMI can be significantly enhanced further in case of using FM layer comprising Fe and Co layers. Namely, it is found that the DMI in Ir/Fe/Co/Pt structure can be enhanced by 80% compared to that of Co/Pt bilayers reaching a very large DMI amplitude of 5.59 meV/atom. Our second approach for enhancing DMI is to use oxide capping layer. We show that DMI is enhanced by 60% in Oxide/Co/Pt structures compared to Co/Pt bilayers. Moreover, we unveiled the DMI mechanism at Oxide/Co interface due to Rashba effect, which is different to Fert-Levy DMI at FM/NM interfaces. Finally, we demonstrate that DMI amplitude can be modulated using an electric field with an efficiency factor comparable to that of the electric field control of perpendicular magnetic anisotropy in transition metal/oxide interfaces. These approaches of DMI controlling pave the way for skyrmion and domain wall motion-based spintronic applications. |
| 学科主题 | Chemistry ; Energy & Fuels ; Materials Science ; Physics |
| 语种 | 英语 |
| 公开日期 | 2018-12-04 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/17255]  |
| 专题 | 2018专题 |
| 推荐引用方式 GB/T 7714 | Cros, Vincent,Yang, Hongxin,Fert, Albert,et al. Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Atomic-Layer Stacking, Insulator Capping and Electric Field[J]. SCIENTIFIC REPORTS,2018,8. |
| APA | Cros, Vincent,Yang, Hongxin,Fert, Albert,Chshiev, Mairbek,&Boulle, Olivier.(2018).Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Atomic-Layer Stacking, Insulator Capping and Electric Field.SCIENTIFIC REPORTS,8. |
| MLA | Cros, Vincent,et al."Controlling Dzyaloshinskii-Moriya Interaction via Chirality Dependent Atomic-Layer Stacking, Insulator Capping and Electric Field".SCIENTIFIC REPORTS 8(2018). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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