Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Wu, Su-Dong; Zhang, David Wei; Ding, Shi-Jin; Sun, Qing-Qing; Xia, Chang-Tai; Horng, Ray-Hua; Yu, Wen-Jie; Zhu, Bao; Ma, Gan; Huan, Ya-Wei |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2018 |
| 卷号 | 113期号:3 |
| 关键词 | In2o3 Indium Films Heterostructures Temperature Valence Offsets Gap |
| 英文摘要 | The energy band alignment of the atomic-layer-deposited In2O3/beta-Ga2O3((2) over bar 10) interface is evaluated by X-ray photoelectron spectroscopy. The X-ray diffraction pattern reveals that the In2O3 film grown at 160 degrees C is amorphous, while it becomes polycrystalline at a higher deposition temperature of 200 degrees C. The bandgaps, determined by reflection electron energy loss spectroscopy, are 4.65, 3.85, and 3.47 eV for beta-Ga2O3, polycrystalline In2O3, and amorphous In2O3, respectively. Both amorphous and polycrystalline In2O3/beta-Ga2O3 interfaces have Type I alignment. The conduction and valence band offsets at the polycrystalline (amorphous) In2O3/beta-Ga2O3 interface are 0.35 and 0.45 eV (0.39 and 0.79 eV), respectively. These observations suggest that polycrystalline In2O3 as an intermediate semiconductor layer is beneficial to the barrier reduction of metal/Ga2O3 contact. Published by AIP Publishing. |
| 学科主题 | Chemistry ; Energy & Fuels ; Materials Science |
| 语种 | 英语 |
| 公开日期 | 2018-12-04 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/17308]  |
| 专题 | 2018专题 |
| 推荐引用方式 GB/T 7714 | Wu, Su-Dong,Zhang, David Wei,Ding, Shi-Jin,et al. Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy[J]. APPLIED PHYSICS LETTERS,2018,113(3). |
| APA | Wu, Su-Dong.,Zhang, David Wei.,Ding, Shi-Jin.,Sun, Qing-Qing.,Xia, Chang-Tai.,...&Sun, Shun-Ming.(2018).Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy.APPLIED PHYSICS LETTERS,113(3). |
| MLA | Wu, Su-Dong,et al."Band alignment of In2O3/beta-Ga2O3 interface determined by X-ray photoelectron spectroscopy".APPLIED PHYSICS LETTERS 113.3(2018). |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。