Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: Significance of controlling defect generation
文献类型：期刊论文
| 作者 | Huang, Feng; Xu, Genbao; Ge, Fangfang; Meng, Fanping; Chen, Yuyun |
| 刊名 | International Thin Films Conference (TACT)
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| 出版日期 | 2018 |
| 页码 | 840-845 |
| 会议地点 | Natl Dong Hwa Univ, Hualien, TAIWAN |
| 出版者 | Materials Science; Physics |
| 公开日期 | 2018-12-04 |
| 源URL | [http://ir.nimte.ac.cn/handle/174433/17529]  |
| 专题 | 2018专题 |
| 推荐引用方式 GB/T 7714 | Huang, Feng,Xu, Genbao,Ge, Fangfang,et al. Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: Significance of controlling defect generation[J]. International Thin Films Conference (TACT),2018:840-845. |
| APA | Huang, Feng,Xu, Genbao,Ge, Fangfang,Meng, Fanping,&Chen, Yuyun.(2018).Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: Significance of controlling defect generation.International Thin Films Conference (TACT),840-845. |
| MLA | Huang, Feng,et al."Ga-doped ZnO films magnetron sputtered at ultralow discharge voltages: Significance of controlling defect generation".International Thin Films Conference (TACT) (2018):840-845. |
入库方式： OAI收割
来源：宁波材料技术与工程研究所
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