Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system
文献类型：会议论文
| 作者 | Long, Guoyun; Zhang, Yaoping; Fan, Junqi |
| 出版日期 | 2017 |
| 关键词 | Bandwidth - Dielectric materials - Film preparation - Hafnium oxides - Multilayer films - Multilayers - Niobium oxide - Refractive index |
| 卷号 | 10255 |
| 页码 | 102551B |
| 英文摘要 | High reflection films for 800nm picoseconds laser system requires broad bandwidth, which is usually about ±50nm, or even to ±70nm, and a high laser damage threshold is needed at the same time. Multilayer dielectrics using three materials Nb2O5/SiO2-HfO2/SiO2were fabricated by electron beam evaporation. Benefit from its high refractive index of Nb2O5and the high damage threshold of HfO2films, the multilayer dielectrics were prepared successfully, which have more than 99.5% reflectance within bandwidth larger than 140nm around the center wavelength of 800 nm. The laser damage characteristics of the films at 150ps, 1Hz were studied, and the damage mechanism was analyzed. © 2017 SPIE. |
| 会议录 | 0277-786X
 |
| 语种 | 英语 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/9038]  |
| 专题 | 光电技术研究所_自适应光学技术研究室（八室） |
| 作者单位 | Institute of Optics and Electronics, Chinese Academy of Science, Chengdu; 610209, China |
| 推荐引用方式 GB/T 7714 | Long, Guoyun,Zhang, Yaoping,Fan, Junqi. Preparation and damage characteristics of broad bandwidth HR films for picoseconds laser system[C]. 见:. |
入库方式： OAI收割
来源：光电技术研究所
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