Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires
文献类型：期刊论文
| 作者 | Haibo Shu, Xiaoshuang Chen , Zongling Ding, Ruibin Dong, Wei Lu |
| 刊名 | Physics Letters A
 |
| 出版日期 | 2010 |
| 卷号 | 374 |
| WOS记录号 | WOS:000280452700027 |
| 公开日期 | 2011-09-13 |
| 源URL | [http://202.127.1.142/handle/181331/2092]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Haibo Shu, Xiaoshuang Chen , Zongling Ding, Ruibin Dong, Wei Lu. Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires[J]. Physics Letters A,2010,374. |
| APA | Haibo Shu, Xiaoshuang Chen , Zongling Ding, Ruibin Dong, Wei Lu.(2010).Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires.Physics Letters A,374. |
| MLA | Haibo Shu, Xiaoshuang Chen , Zongling Ding, Ruibin Dong, Wei Lu."Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires".Physics Letters A 374(2010). |
入库方式： OAI收割
来源：上海技术物理研究所
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