Fabrication and characterization of a novel infrared photoconductive sensor in InAlAs/InGaAs heterojunction
文献类型：期刊论文
| 作者 | Yan Zhang; Xin Cao; Zheng He; Chunquan Zhuang; Yifang Chen; Jiaxiong Fang |
| 刊名 | Solid-State Electronics
 |
| 出版日期 | 2008 |
| 卷号 | 52 |
| WOS记录号 | WOS:000252696100012 |
| 公开日期 | 2011-10-09 |
| 源URL | [http://202.127.1.142/handle/181331/2358]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Yan Zhang,Xin Cao,Zheng He,et al. Fabrication and characterization of a novel infrared photoconductive sensor in InAlAs/InGaAs heterojunction[J]. Solid-State Electronics,2008,52. |
| APA | Yan Zhang,Xin Cao,Zheng He,Chunquan Zhuang,Yifang Chen,&Jiaxiong Fang.(2008).Fabrication and characterization of a novel infrared photoconductive sensor in InAlAs/InGaAs heterojunction.Solid-State Electronics,52. |
| MLA | Yan Zhang,et al."Fabrication and characterization of a novel infrared photoconductive sensor in InAlAs/InGaAs heterojunction".Solid-State Electronics 52(2008). |
入库方式： OAI收割
来源：上海技术物理研究所
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