Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy
文献类型：期刊论文
| 作者 | J.B.Wang; Z.F.Li; P.P.Chen; WeiLu; T.Yao |
| 刊名 | Acta Materialia
 |
| 出版日期 | 2007 |
| 卷号 | 1期号:55 |
| WOS记录号 | WOS:000242928700016 |
| 公开日期 | 2011-10-11 |
| 源URL | [http://202.127.1.142/handle/181331/2394]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | J.B.Wang,Z.F.Li,P.P.Chen,et al. Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy[J]. Acta Materialia,2007,1(55). |
| APA | J.B.Wang,Z.F.Li,P.P.Chen,WeiLu,&T.Yao.(2007).Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy.Acta Materialia,1(55). |
| MLA | J.B.Wang,et al."Raman study of gap mode and lattice disorder effect in InN films prepared by plasma-assisted molecular beam epitaxy".Acta Materialia 1.55(2007). |
入库方式： OAI收割
来源：上海技术物理研究所
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