Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model
文献类型：期刊论文
| 作者 | W.D.Hu; X.S.Chen; Z.J.Quan; X.M.Zhang; Y.Huangetal. |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2007 |
| 卷号 | 102 |
| WOS记录号 | WOS:000249240600094 |
| 公开日期 | 2011-10-11 |
| 源URL | [http://202.127.1.142/handle/181331/2408]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | W.D.Hu,X.S.Chen,Z.J.Quan,et al. Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model[J]. Journal of Applied Physics,2007,102. |
| APA | W.D.Hu,X.S.Chen,Z.J.Quan,X.M.Zhang,&Y.Huangetal..(2007).Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model.Journal of Applied Physics,102. |
| MLA | W.D.Hu,et al."Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model".Journal of Applied Physics 102(2007). |
入库方式： OAI收割
来源：上海技术物理研究所
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