First-principles study of arsenic impurity clusters in molecular beam epitaxy(MBE) grown HgCdTe
文献类型：期刊论文
| 作者 | HeDuan; XiaoshuangChen; YanHuang; WeiLu |
| 刊名 | Solid State Communications
 |
| 出版日期 | 2007 |
| 卷号 | 143 |
| 公开日期 | 2011-10-11 |
| 源URL | [http://202.127.1.142/handle/181331/2418]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | HeDuan,XiaoshuangChen,YanHuang,et al. First-principles study of arsenic impurity clusters in molecular beam epitaxy(MBE) grown HgCdTe[J]. Solid State Communications,2007,143. |
| APA | HeDuan,XiaoshuangChen,YanHuang,&WeiLu.(2007).First-principles study of arsenic impurity clusters in molecular beam epitaxy(MBE) grown HgCdTe.Solid State Communications,143. |
| MLA | HeDuan,et al."First-principles study of arsenic impurity clusters in molecular beam epitaxy(MBE) grown HgCdTe".Solid State Communications 143(2007). |
入库方式： OAI收割
来源：上海技术物理研究所
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