Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study
文献类型：期刊论文
| 作者 | HEDUAN; XIAOSHUANGCHEN; YANHUANG; WEILU |
| 刊名 | Journal of Electronic Materials
 |
| 出版日期 | 2007 |
| 卷号 | 36期号:8 |
| WOS记录号 | WOS:000249255000014 |
| 公开日期 | 2011-10-11 |
| 源URL | [http://202.127.1.142/handle/181331/2426]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | HEDUAN,XIAOSHUANGCHEN,YANHUANG,et al. Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study[J]. Journal of Electronic Materials,2007,36(8). |
| APA | HEDUAN,XIAOSHUANGCHEN,YANHUANG,&WEILU.(2007).Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study.Journal of Electronic Materials,36(8). |
| MLA | HEDUAN,et al."Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study".Journal of Electronic Materials 36.8(2007). |
入库方式： OAI收割
来源：上海技术物理研究所
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