Effects of carrier degeneracy and conduction band non-parabolicity on the simulation of HgCdTe photovoltaic devices
文献类型：期刊论文
| 作者 | Z.J.Quan; G.B.Chen; L.Z.Sun; Z.H.Ye; Z.F.Li; W.Lu |
| 刊名 | Infrared Physics and Technology
 |
| 出版日期 | 2007 |
| 卷号 | 50 |
| WOS记录号 | WOS:000245641200001 |
| 公开日期 | 2011-10-11 |
| 源URL | [http://202.127.1.142/handle/181331/2448]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Z.J.Quan,G.B.Chen,L.Z.Sun,et al. Effects of carrier degeneracy and conduction band non-parabolicity on the simulation of HgCdTe photovoltaic devices[J]. Infrared Physics and Technology,2007,50. |
| APA | Z.J.Quan,G.B.Chen,L.Z.Sun,Z.H.Ye,Z.F.Li,&W.Lu.(2007).Effects of carrier degeneracy and conduction band non-parabolicity on the simulation of HgCdTe photovoltaic devices.Infrared Physics and Technology,50. |
| MLA | Z.J.Quan,et al."Effects of carrier degeneracy and conduction band non-parabolicity on the simulation of HgCdTe photovoltaic devices".Infrared Physics and Technology 50(2007). |
入库方式： OAI收割
来源：上海技术物理研究所
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