The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement
文献类型：期刊论文
| 作者 | Yanqiu Lv; Nili Wang; Chunquan Zhuang; Ping Li; Bing Han; Haimei Gong |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2006 |
| 卷号 | 21 |
| 公开日期 | 2011-10-21 |
| 源URL | [http://202.127.1.142/handle/181331/2538]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Yanqiu Lv,Nili Wang,Chunquan Zhuang,et al. The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21. |
| APA | Yanqiu Lv,Nili Wang,Chunquan Zhuang,Ping Li,Bing Han,&Haimei Gong.(2006).The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,21. |
| MLA | Yanqiu Lv,et al."The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 21(2006). |
入库方式： OAI收割
来源：上海技术物理研究所
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