A novel photoluminescence transition influenced by O implantation in ZnO bulk
文献类型：期刊论文
| 作者 | Hongmei Zhong; Xiaoshuang Chen; L.Z. Sun; W. Lu; Q.X. Zhao; M. Willander |
| 刊名 | Chemical Physics Letters
 |
| 出版日期 | 2006 |
| 卷号 | 421 |
| WOS记录号 | WOS:000236662600061 |
| 公开日期 | 2011-10-21 |
| 源URL | [http://202.127.1.142/handle/181331/2634]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Hongmei Zhong,Xiaoshuang Chen,L.Z. Sun,et al. A novel photoluminescence transition influenced by O implantation in ZnO bulk[J]. Chemical Physics Letters,2006,421. |
| APA | Hongmei Zhong,Xiaoshuang Chen,L.Z. Sun,W. Lu,Q.X. Zhao,&M. Willander.(2006).A novel photoluminescence transition influenced by O implantation in ZnO bulk.Chemical Physics Letters,421. |
| MLA | Hongmei Zhong,et al."A novel photoluminescence transition influenced by O implantation in ZnO bulk".Chemical Physics Letters 421(2006). |
入库方式： OAI收割
来源：上海技术物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。