Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study
文献类型：期刊论文
| 作者 | Weida Hu; Xiaoshuang Chen *; Xuchang Zhou; Zhijue Quan; Lu Wei |
| 刊名 | Microelectronics Journal
 |
| 出版日期 | 2006 |
| 卷号 | 37 |
| WOS记录号 | WOS:000238073600011 |
| 公开日期 | 2011-10-21 |
| 源URL | [http://202.127.1.142/handle/181331/2682]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Weida Hu,Xiaoshuang Chen *,Xuchang Zhou,et al. Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study[J]. Microelectronics Journal,2006,37. |
| APA | Weida Hu,Xiaoshuang Chen *,Xuchang Zhou,Zhijue Quan,&Lu Wei.(2006).Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study.Microelectronics Journal,37. |
| MLA | Weida Hu,et al."Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study".Microelectronics Journal 37(2006). |
入库方式： OAI收割
来源：上海技术物理研究所
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