Structural and electronic properties of the in situ impurity AsHg in Hg0.5Cd0.5Te: First-principles study
文献类型：期刊论文
| 作者 | L. Z. Sun; X. S. Chen; Y. L. Sun; X. H. Zhou; Zh. J. Quan; He Duan; Wei Lu |
| 刊名 | PHYSICAL REVIEW B
 |
| 出版日期 | 2005 |
| 卷号 | 71 |
| 公开日期 | 2011-11-08 |
| 源URL | [http://202.127.1.142/handle/181331/2810]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | L. Z. Sun,X. S. Chen,Y. L. Sun,et al. Structural and electronic properties of the in situ impurity AsHg in Hg0.5Cd0.5Te: First-principles study[J]. PHYSICAL REVIEW B,2005,71. |
| APA | L. Z. Sun.,X. S. Chen.,Y. L. Sun.,X. H. Zhou.,Zh. J. Quan.,...&Wei Lu.(2005).Structural and electronic properties of the in situ impurity AsHg in Hg0.5Cd0.5Te: First-principles study.PHYSICAL REVIEW B,71. |
| MLA | L. Z. Sun,et al."Structural and electronic properties of the in situ impurity AsHg in Hg0.5Cd0.5Te: First-principles study".PHYSICAL REVIEW B 71(2005). |
入库方式： OAI收割
来源：上海技术物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。