Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO3 coated Si substrates
文献类型：期刊论文
| 作者 | J.H. Ma; X.J. Meng; J.L. Sun; T. Lin; F.W. Shi; J.H. Chu |
| 刊名 | Materials Research Bulletin
 |
| 出版日期 | 2005 |
| 卷号 | 40 |
| 公开日期 | 2011-11-08 |
| 源URL | [http://202.127.1.142/handle/181331/2834]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | J.H. Ma,X.J. Meng,J.L. Sun,et al. Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO3 coated Si substrates[J]. Materials Research Bulletin,2005,40. |
| APA | J.H. Ma,X.J. Meng,J.L. Sun,T. Lin,F.W. Shi,&J.H. Chu.(2005).Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO3 coated Si substrates.Materials Research Bulletin,40. |
| MLA | J.H. Ma,et al."Effect of annealing ambient on structure and ferroelectric properties of Pb(Zr0.4Ti0.6)O3 thin films on LaNiO3 coated Si substrates".Materials Research Bulletin 40(2005). |
入库方式： OAI收割
来源：上海技术物理研究所
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