Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm
文献类型：期刊论文
| 作者 | Yu Zhu GAO; Xiu Ying GONG; Yong Sheng GUI; Tomuo YAMAGUCHI1 and Ning DAI |
| 刊名 | Japanese Journal of Applied Physics Part 1-regular Papers Short Notes & Review Papers
 |
| 出版日期 | 2004 |
| 卷号 | 43期号:3 |
| 公开日期 | 2011-11-30 |
| 源URL | [http://202.127.1.142/handle/181331/3379]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Yu Zhu GAO,Xiu Ying GONG,Yong Sheng GUI,et al. Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm[J]. Japanese Journal of Applied Physics Part 1-regular Papers Short Notes & Review Papers,2004,43(3). |
| APA | Yu Zhu GAO,Xiu Ying GONG,Yong Sheng GUI,&Tomuo YAMAGUCHI1 and Ning DAI.(2004).Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm.Japanese Journal of Applied Physics Part 1-regular Papers Short Notes & Review Papers,43(3). |
| MLA | Yu Zhu GAO,et al."Electrical Properties of Melt-Epitaxy-Grown InAs0:04Sb0:96 Layerswith Cutoff Wavelength of 12μm".Japanese Journal of Applied Physics Part 1-regular Papers Short Notes & Review Papers 43.3(2004). |
入库方式： OAI收割
来源：上海技术物理研究所
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