InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy
文献类型：期刊论文
| 作者 | Yu Zhu GAO; Tomuo YAMAGUCHI; Xiu Ying GONG; Hirofumi KAN; Mitsuru AOYAMA; Ning DAI |
| 刊名 | Physics Part 1-Regular Papers Short Notes & Review Papers
 |
| 出版日期 | 2003 |
| 卷号 | 42期号:7A |
| 公开日期 | 2011-11-30 |
| 源URL | [http://202.127.1.142/handle/181331/3427]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Yu Zhu GAO,Tomuo YAMAGUCHI,Xiu Ying GONG,et al. InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy[J]. Physics Part 1-Regular Papers Short Notes & Review Papers,2003,42(7A). |
| APA | Yu Zhu GAO,Tomuo YAMAGUCHI,Xiu Ying GONG,Hirofumi KAN,Mitsuru AOYAMA,&Ning DAI.(2003).InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy.Physics Part 1-Regular Papers Short Notes & Review Papers,42(7A). |
| MLA | Yu Zhu GAO,et al."InNAsSb Single Crystals with Cutoff Wavelength of 11–13.5μm Grown by Melt Epitaxy".Physics Part 1-Regular Papers Short Notes & Review Papers 42.7A(2003). |
入库方式： OAI收割
来源：上海技术物理研究所
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