Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor
文献类型：期刊论文
| 作者 | Yongsheng Gui; Shaoling Guo; Guozhen Zheng; and Junhao Chu; Xiaohua Fang; Kai Qiu; Xingwu Wang |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2000 |
| 卷号 | 76期号:10 |
| WOS记录号 | WOS:000085560800031 |
| 公开日期 | 2011-11-30 |
| 源URL | [http://202.127.1.142/handle/181331/3577]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Yongsheng Gui,Shaoling Guo,Guozhen Zheng,et al. Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor[J]. APPLIED PHYSICS LETTERS,2000,76(10). |
| APA | Yongsheng Gui.,Shaoling Guo.,Guozhen Zheng.,and Junhao Chu.,Xiaohua Fang.,...&Xingwu Wang.(2000).Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor.APPLIED PHYSICS LETTERS,76(10). |
| MLA | Yongsheng Gui,et al."Electron transport in the AlGaAs/InGaAs double-heterostructure pseudomorphic high-electron-mobility transistor".APPLIED PHYSICS LETTERS 76.10(2000). |
入库方式： OAI收割
来源：上海技术物理研究所
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