中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures

文献类型:期刊论文

作者Yuan S; Jagadish C; Kim Y; Chang Y; Tan HH; Cohen RM; Petravic M; Dao LV; Gal M; Chan MCY
刊名IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
出版日期1998
卷号4期号:4页码:629-635
WOS记录号WOS:000076177400007
公开日期2012-11-21
源URL[http://202.127.1.142/handle/181331/6186]  
专题上海技术物理研究所_上海技物所
推荐引用方式
GB/T 7714
Yuan S,Jagadish C,Kim Y,et al. Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,1998,4(4):629-635.
APA Yuan S.,Jagadish C.,Kim Y.,Chang Y.,Tan HH.,...&Zory PS.(1998).Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,4(4),629-635.
MLA Yuan S,et al."Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures".IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 4.4(1998):629-635.

入库方式: OAI收割

来源:上海技术物理研究所

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