Thermally induced capacitance and electric field domains in GaAs/Al0.3Ga0.7As quantum well infrared photodetector
文献类型：期刊论文
| 作者 | Huang XL; Shin YG; Lim KY; Suh EK; Lee HJ; Shen SC |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 1997 |
| 卷号 | 41期号:6页码:845-850 |
| WOS记录号 | WOS:A1997XJ04400006 |
| 公开日期 | 2012-11-21 |
| 源URL | [http://202.127.1.142/handle/181331/6398]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 推荐引用方式 GB/T 7714 | Huang XL,Shin YG,Lim KY,et al. Thermally induced capacitance and electric field domains in GaAs/Al0.3Ga0.7As quantum well infrared photodetector[J]. SOLID-STATE ELECTRONICS,1997,41(6):845-850. |
| APA | Huang XL,Shin YG,Lim KY,Suh EK,Lee HJ,&Shen SC.(1997).Thermally induced capacitance and electric field domains in GaAs/Al0.3Ga0.7As quantum well infrared photodetector.SOLID-STATE ELECTRONICS,41(6),845-850. |
| MLA | Huang XL,et al."Thermally induced capacitance and electric field domains in GaAs/Al0.3Ga0.7As quantum well infrared photodetector".SOLID-STATE ELECTRONICS 41.6(1997):845-850. |
入库方式： OAI收割
来源：上海技术物理研究所
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