640x512 pixel InGaAs FPAs for short-wave infrared and visible light imaging
文献类型：会议论文
| 作者 | Shao XM; Bo Y; Huang SL; Yang W; Li X; Zhu XL; Tao L; Yu C; Gong HM |
| 出版日期 | 2017 |
| DOI | 10.1117/12.2273551 |
| 英文摘要 | The spectral irradiance of moonlight and air glow is mainly in the wavelength region from visible to short-wave infrared (SWIR) band. The imaging over the wavelength range of visible to SWIR is of great significance for applications such as civil safety night vision and agricultural sorting. In this paper 640x512 visible-SWIR InGaAs focal plane arrays (FPAs) were studied for night vision and SWIR imaging. A special epitaxial wafer structure with etch-stop layer was designed and developed. Planar-type 640x512 InGaAs detector arrays were fabricated. The photosensitive arrays were bonded with readout circuit through Indium bumps by flip-chip process. Then the InP substrate was removed by mechanical thinning and chemical wet etching. The visible irradiance can reach InGaAs absorption layer and then to be detected. As a result the detection spectrum of the InGaAs FPAs has been extended toward visible spectrum from 0.5 mu m to 1.7 mu m. The quantum efficiency is approximately 15% at 0.5 mu m 30% at 0.7 mu m 50% at 0.8 mu m 90% at 1.55 mu m. The average peak detectivity is higher than 2x1012 cm.Hz(1/2)/W at room temperature with an integrated time of 10 ms. The Visible-SWIR InGaAs FPAs were applied to an imaging system for SWIR and visible light imaging. |
| 语种 | 英语 |
| 源URL | [http://202.127.2.71:8080/handle/181331/12073]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Shao XM,Bo Y,Huang SL,et al. 640x512 pixel InGaAs FPAs for short-wave infrared and visible light imaging[C]. 见:. |
入库方式： OAI收割
来源：上海技术物理研究所
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