Extended Wavelength InGaAs SWIR FPAs with High Performance
文献类型：会议论文
| 作者 | Li X; Li T; Yu CL; Tang HJ; Deng SY; Shao XM; Zhang YG; Gong HM |
| 出版日期 | 2017 |
| 关键词 | extended InGaAs perimeter-to-area photodiodes SWIR FPAs |
| DOI | 10.1117/12.2273550 |
| 英文摘要 | The extended InGaAs short wavelength infrared (SWIR) detector covers 1.0-2.5 mu m wavelength which plays an important role in weather forecast resource observation low light level systems and astronomical observation and so on. In order to fabricate the high performance extended InGaAs detector materials structure and parameters were characterized with Scanning Capacitance Microscopy (SCM) Scanning Spreading Resistance Microscopy (SSRM) the spreading of minority carriers and lattice quality were obtained. Mesa etching process etching damage restoration technique and low temperature passivation technique were used in the fabrication of the extended InGaAs detector. The improvement of material structure and device process was studied by fabricating and measuring different perimeter-to-area (P/A) photodiodes and singledevice respectively. The dark current density of the extended InGaAs detector obviously was reduced about 2 nA/cm(2) at 170 K. The 512x256 FPAs were fabricated the peak detectivity and the quantum efficiency of which are 5x1011 cmHz(1/2)/W and 80% respectively. The staring image yielded of the 512x256 FPAs is shown which demonstrates very good imaging quality. |
| 语种 | 英语 |
| 源URL | [http://202.127.2.71:8080/handle/181331/12090]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Li X,Li T,Yu CL,et al. Extended Wavelength InGaAs SWIR FPAs with High Performance[C]. 见:. |
入库方式： OAI收割
来源：上海技术物理研究所
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