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Photogating in Low Dimensional Photodetectors
文献类型：期刊论文
| 作者 | Fang HH; Hu WD |
| 刊名 | ADVANCED SCIENCE
 |
| 出版日期 | 2017 |
| 卷号 | 4期号:12 |
| 关键词 | infrared low dimensional photodetectors photogating phototransistors |
| DOI | 10.1002/advs.201700323 |
| 英文摘要 | Low dimensional materials including quantum dots nanowires 2D materials and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating which is usually observed in photodetectors based on low dimensional materials and their hybrid structures is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from conventional photoconductive effect. The trap- and hybrid-induced photogating including their origins formations and characteristics are subsequently discussed. Then the recent progress on trap- and hybrid-induced photogating in low dimensional photodetectors is elaborated. Though a high gain bandwidth product as high as 10(9) Hz is reported in several cases a trade-off between gain and bandwidth has to be made for this type of photogating. The general photogating is put forward according to another three reported studies very recently. General photogating may enable simultaneous high gain and high bandwidth paving the way to explore novel high-performance photodetectors. |
| 源URL | [http://202.127.2.71:8080/handle/181331/12256]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Fang HH,Hu WD. Photogating in Low Dimensional Photodetectors[J]. ADVANCED SCIENCE,2017,4(12). |
| APA | Fang HH,&Hu WD.(2017).Photogating in Low Dimensional Photodetectors.ADVANCED SCIENCE,4(12). |
| MLA | Fang HH,et al."Photogating in Low Dimensional Photodetectors".ADVANCED SCIENCE 4.12(2017). |
入库方式： OAI收割
来源：上海技术物理研究所
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