Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared
文献类型：期刊论文
| 作者 | Wang JL; Fang HH; Wang XD; Chen XS; Lu W; Hu WD |
| 刊名 | SMALL
 |
| 出版日期 | 2017 |
| 卷号 | 13期号:35 |
| 关键词 | DER-WAALS HETEROSTRUCTURES P-N-JUNCTIONS FEW-LAYER MOS2 INTEGRATED GRAPHENE PHOTODETECTOR PULSED-LASER DEPOSITION HIGH-PERFORMANCE BROAD-BAND HIGH-RESPONSIVITY ROOM-TEMPERATURE PHOTOCURRENT GENERATION |
| DOI | 10.1002/smll.201700894 |
| 英文摘要 | Two-dimensional (2D) materials have drawn tremendous attention in recent years. Being atomically thin stacked with van der Waals force and free of surface chemical dangling bonds 2D materials exhibit several distinct physical properties. To date 2D materials include graphene transition metal dichalcogenides (TMDS) black phosphorus black P(1-x)Asx boron nitride (BN) and so forth. Owing to their various bandgaps 2D materials have been utilized for photonics and optoelectronics. Photodetectors based on 2D materials with different structures and detection mechanisms have been established and present excellent performance. In this Review localized field enhanced 2D material photodetectors (2DPDs) are introduced with sensitivity over the spectrum from ultraviolet visible to infrared in the sight of the influence of device structure on photodetector performance instead of directly illustrating the detection mechanisms. Six types of localized fields are summarized. They are: ferroelectric field photogating electric field floating gate induced electrostatic field interlayer built-in field localized optical field and photo-induced temperature gradient field respectively. These localized fields are proved to effectively promote the detection ability of 2DPDs by suppressing background noise enhancing optical absorption improving electron-hole separation efficiency amplifying photoelectric gain and/or extending the detection range. |
| 源URL | [http://202.127.2.71:8080/handle/181331/12265]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Wang JL,Fang HH,Wang XD,et al. Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared[J]. SMALL,2017,13(35). |
| APA | Wang JL,Fang HH,Wang XD,Chen XS,Lu W,&Hu WD.(2017).Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared.SMALL,13(35). |
| MLA | Wang JL,et al."Recent Progress on Localized Field Enhanced Two-dimensional Material Photodetectors from Ultraviolet-Visible to Infrared".SMALL 13.35(2017). |
入库方式： OAI收割
来源：上海技术物理研究所
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