Study on the performance of 2.6 mu m In0.83Ga0.17As detector with different etch gases
文献类型：期刊论文
| 作者 | Li P; Tang HJ; Li T; Li X; Shao XM; Ma YJ; Gong HM |
| 刊名 | INFRARED PHYSICS & TECHNOLOGY
 |
| 出版日期 | 2017 |
| 卷号 | 85页码:211-215 |
| 关键词 | ICP induced damage Cl-2/N-2 Cl-2/CH4 Extended wavelength InGaAs |
| DOI | 10.1016/j.infrared.2017.06.013 |
| 英文摘要 | In order to obtain a low-damage recipe in the ICP processing ICP-induced damage using Cl-2/CH4 etch gases in extended wavelength In0.83Ga0.17As detector materials was studied in this paper. The effect of ICP etching on In0.83Ga0.17As samples was characterized qualitatively by the photoluminescence (PL) technology. The etch damage of In0.83Ga0.17As samples was characterized quantitatively by the Transmission Line Model (TLM) current voltage (IV) measurement signal and noise testing and the Fourier Transform Infrared Spectroscopy (FTIR) technologies. The results showed that the Cl-2/CH4 etching processing could lead better detector performance than that Cl-2/N-2 such as a larger square resistance a lower dark current a lower noise voltage and a higher peak detectivity. The lower PL signal intensity and lower dark current could be attributed to the hydrogen decomposed by the CH4 etch gases in the plasma etching process. These hydrogen particles generated non-radiative recombination centers in inner materials to weaken the PL intensity and passivated dangling bond at the surface to reduce the dark current. The larger square resistance resulted from the lower etch damage. The lower dark current meant that the detectors have less dangling bonds and leakage channels. (C) 2017 Published by Elsevier B.V. |
| 源URL | [http://202.127.2.71:8080/handle/181331/12268]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Li P,Tang HJ,Li T,et al. Study on the performance of 2.6 mu m In0.83Ga0.17As detector with different etch gases[J]. INFRARED PHYSICS & TECHNOLOGY,2017,85:211-215. |
| APA | Li P.,Tang HJ.,Li T.,Li X.,Shao XM.,...&Gong HM.(2017).Study on the performance of 2.6 mu m In0.83Ga0.17As detector with different etch gases.INFRARED PHYSICS & TECHNOLOGY,85,211-215. |
| MLA | Li P,et al."Study on the performance of 2.6 mu m In0.83Ga0.17As detector with different etch gases".INFRARED PHYSICS & TECHNOLOGY 85(2017):211-215. |
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来源：上海技术物理研究所
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