Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors
文献类型：期刊论文
| 作者 | Jin C; Chen JX; Xu QQ; Yu CZ; He L |
| 刊名 | OPTICAL ENGINEERING
 |
| 出版日期 | 2017 |
| 卷号 | 56期号:5 |
| 关键词 | short-wavelength infrared type II InGaAs/GaAsSb superlattice quantum efficiency absorption region thickness |
| DOI | 10.1117/1.OE.56.5.057102 |
| 英文摘要 | We report on a p-i-n photodetector based on type II InGaAs/GaAsSb SLs with a cutoff wavelength of 2.5 mu m at room temperature. High quality materials were grown on an n-type (100) InP substrate by molecular beam epitaxy. Photoluminescence spectroscopy peak of the SLs around 2.5 mu m and atomic steps in the atomic force microscope image were clearly observed. A device with the 100% cutoff wavelength of 2.5 mu m at 293 K was fabricated. Temperature-dependent current-voltage measurements show that the diffusion current and generation-recombination current dominate at temperatures higher than 200 K while the generation-recombination current and trap-assisted tunneling current dominate at temperatures below 200 K. The optical response measurement quantum efficiency increases with reverse bias and a diffusion length of 0.3 mu m was extracted. The cause of the small diffusion length and possible approaches to improve it were briefly discussed. (C) 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) |
| 源URL | [http://202.127.2.71:8080/handle/181331/12274]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Jin C,Chen JX,Xu QQ,et al. Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors[J]. OPTICAL ENGINEERING,2017,56(5). |
| APA | Jin C,Chen JX,Xu QQ,Yu CZ,&He L.(2017).Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors.OPTICAL ENGINEERING,56(5). |
| MLA | Jin C,et al."Electrical and optical performances of InGaAs/GaAsSb superlattice short-wavelength infrared detectors".OPTICAL ENGINEERING 56.5(2017). |
入库方式： OAI收割
来源：上海技术物理研究所
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