High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates
文献类型：期刊论文
| 作者 | Xu ZC; Chen JX; Wang FF; Zhou Y; He L |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2017 |
| 卷号 | 32期号:5 |
| 关键词 | InAs/GaAsSb superlattices InAs substrates strain balance quantum efficiency detectivity |
| DOI | 10.1088/1361-6641/aa6377 |
| 英文摘要 | We demonstrated high performance long wavelength InAs/GaAs0.09Sb0.91 type-II superlattices infrared photo-detectors grown on InAs substrates. Superlattices photodiodes with InAs layer thickness from 14 to 24 ML showed 50% cutoff wavelength from 6 to 12.5 mu m while the lattice-mismatch was kept smaller than 4.0. x. 10(-4) without any additional interface layers for strain balance. Quantum efficiency spectra showed oscillating characteristics which were attributed to the plasma effect in the highly doped InAs buffer layers. The absorption coefficient of 1800 cm(-1) and diffusion length of 10 mu m of minority carriers in the SLs on InAs have been obtained through simulation. A photodiode exhibited a 12.5 mu m cutoff wavelength with a peak detectivity of 7.4 x 1010 cm Hz(1/2)W(-1) and 2.6 x 10(11) cm Hz(1/2)W(-1) at 76 K and 52 K respectively. |
| 源URL | [http://202.127.2.71:8080/handle/181331/12275]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Xu ZC,Chen JX,Wang FF,et al. High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2017,32(5). |
| APA | Xu ZC,Chen JX,Wang FF,Zhou Y,&He L.(2017).High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,32(5). |
| MLA | Xu ZC,et al."High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32.5(2017). |
入库方式： OAI收割
来源：上海技术物理研究所
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