Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector
文献类型：期刊论文
| 作者 | Huang B; Xu JT; Wang L; Zhang Y; Li XY |
| 刊名 | OPTICAL AND QUANTUM ELECTRONICS
 |
| 出版日期 | 2017 |
| 卷号 | 49期号:4 |
| 关键词 | InGaN p-i-n Ultraviolet photodetector Simulation Responsivity |
| DOI | 10.1364/OE.25.001629 |
| 英文摘要 | In this paper the back-illuminated In0.09Ga0.91N p-i-n ultraviolet photodetectors have been fabricated and simulated. The responsivity characteristic was shown experimentally and theoretically. The peak responsivity of photodetector was improved from 0.06 A/W at 394 nm to 0.19 A/W at 402 nm since the growth of a 30 nm i-GaN layer between i-InGaN layer and n-GaN layer. The photodetector models and characteristics were numerical simulated and optimized by Silvaco TCAD semiconductor simulation software. The simulation results revealed that the responsivity has great relationship with the Shockley-Read-Hall recombination lifetime intrinsic layer thickness and extinction coefficient k. In addition the simulation results were in good agreement with the experimental results when the SRH recombination lifetime about 0.01-0.1 ns and the In composition x introduced a 0.05 increment of In0.09Ga0.91N layer. |
| 源URL | [http://202.127.2.71:8080/handle/181331/12276]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Huang B,Xu JT,Wang L,et al. Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector[J]. OPTICAL AND QUANTUM ELECTRONICS,2017,49(4). |
| APA | Huang B,Xu JT,Wang L,Zhang Y,&Li XY.(2017).Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector.OPTICAL AND QUANTUM ELECTRONICS,49(4). |
| MLA | Huang B,et al."Performance of back-illuminated In0.09Ga0.91N-based p-i-n photodetector".OPTICAL AND QUANTUM ELECTRONICS 49.4(2017). |
入库方式： OAI收割
来源：上海技术物理研究所
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