Negative thermal quenching of below-bandgap photoluminescence in InPBi
文献类型：期刊论文
| 作者 | Chen XR; Wu XY; Yue L; Zhu LQ; Pan WW; Qi Z; Wang SM; Shao J |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2017 |
| 卷号 | 110期号:5 |
| 关键词 | MOLECULAR-BEAM EPITAXY ANTISITE DEFECTS GROWTH SOLIDS |
| DOI | 10.1063/1.4975586 |
| 英文摘要 | This paper reports a temperature-dependent (10-280 K) photoluminescence (PL) study of below-bandgap electron-hole recombinations and anomalous negative thermal quenching of PL intensity in InP1-xBix (x = 0.019 and 0.023). Four PL features are well resolved by curve-fitting of the PL spectra of which the energies exhibit different temperature dependence. The integral intensities of the two high-energy features diminish monotonically as temperature rises up while those of the two low-energy features decrease below but increase anomalously above 180 K. A phenomenological model is established that the residual electrons in the final state of the PL transition transfer into nonradiative state via thermal hopping and the thermal hopping produces in parallel holes in the final state and hence enhances the radiative recombination significantly. A reasonable interpretation of the PL processes in InPBi is achieved and the activation energies of the PL quenching and thermal hopping are deduced. Published by AIP Publishing. |
| 源URL | [http://202.127.2.71:8080/handle/181331/12278]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Chen XR,Wu XY,Yue L,et al. Negative thermal quenching of below-bandgap photoluminescence in InPBi[J]. APPLIED PHYSICS LETTERS,2017,110(5). |
| APA | Chen XR.,Wu XY.,Yue L.,Zhu LQ.,Pan WW.,...&Shao J.(2017).Negative thermal quenching of below-bandgap photoluminescence in InPBi.APPLIED PHYSICS LETTERS,110(5). |
| MLA | Chen XR,et al."Negative thermal quenching of below-bandgap photoluminescence in InPBi".APPLIED PHYSICS LETTERS 110.5(2017). |
入库方式： OAI收割
来源：上海技术物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。