LPE growth and optical characteristics of GaAs1-xSbx epilayer
文献类型：期刊论文
| 作者 | Wang Y; Hu SH; Zhou W; Sun Y; Zhang B; Wang C; Dai N |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2017 |
| 卷号 | 463页码:123-127 |
| 关键词 | QUANTUM-WELLS GAASSB TEMPERATURE PHOTOLUMINESCENCE WAVELENGTH DEPENDENCE LAYERS |
| DOI | 10.1016/j.jcrysgro.2017.01.040 |
| 英文摘要 | A series of GaAs1-xSbx epilayers have been successfully grown on GaAs (100) substrates by liquid phase epitaxy (LPE) technique at about 550 degrees C. Samples with different antimony (Sb) contents have been analyzed by high-resolution X-ray diffraction (HRXRD) measurement, which confirms the incorporation of Sb in the epilayers. Room temperature optical properties of GaAs1-xSbx epilayers were performed by photo luminescence (PL) and transmission spectra. (C) 2017 Elsevier B.V. All rights reserved. |
| 源URL | [http://202.127.2.71:8080/handle/181331/12281]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Wang Y,Hu SH,Zhou W,et al. LPE growth and optical characteristics of GaAs1-xSbx epilayer[J]. JOURNAL OF CRYSTAL GROWTH,2017,463:123-127. |
| APA | Wang Y.,Hu SH.,Zhou W.,Sun Y.,Zhang B.,...&Dai N.(2017).LPE growth and optical characteristics of GaAs1-xSbx epilayer.JOURNAL OF CRYSTAL GROWTH,463,123-127. |
| MLA | Wang Y,et al."LPE growth and optical characteristics of GaAs1-xSbx epilayer".JOURNAL OF CRYSTAL GROWTH 463(2017):123-127. |
入库方式： OAI收割
来源：上海技术物理研究所
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