Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays
文献类型：期刊论文
| 作者 | Li YT; Hu WD; Ye ZH; Chen YY; Chen XS; Lu W |
| 刊名 | OPTICS LETTERS
 |
| 出版日期 | 2017 |
| 卷号 | 42期号:7页码:1325-1328 |
| 关键词 | BEAM-INDUCED CURRENT |
| DOI | 10.1364/OL.42.001325 |
| 英文摘要 | Mercury cadmium telluride is the standard material to fabricate high-performance infrared focal plane array (FPA) detectors. However, etch-induced damage is a serious obstacle for realizing highly uniform and damage-free FPA detectors. In this Letter, the high signal-to-noise ratio and high spatial resolution scanning photocurrent microscopy (SPCM) is used to characterize the dry etch-induced inversion layer of vacancy-doped p-type Hg1-xCdxTe (x = 0.22) material under different etching temperatures. It is found that the peak-to-peak magnitude of the SPCM profile decreases with a decrease in etching temperature, showing direct proof of controlling dry etch-induced type conversion. Our work paves the way toward seeking optimal etching processes in large-scale infrared FPAs. (C) 2017 Optical Society of America |
| 源URL | [http://202.127.2.71:8080/handle/181331/12282]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Li YT,Hu WD,Ye ZH,et al. Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays[J]. OPTICS LETTERS,2017,42(7):1325-1328. |
| APA | Li YT,Hu WD,Ye ZH,Chen YY,Chen XS,&Lu W.(2017).Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays.OPTICS LETTERS,42(7),1325-1328. |
| MLA | Li YT,et al."Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays".OPTICS LETTERS 42.7(2017):1325-1328. |
入库方式： OAI收割
来源：上海技术物理研究所
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