Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors
文献类型：期刊论文
| 作者 | Wang JL; Hu WD |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2017 |
| 卷号 | 26期号:3 |
| 关键词 | FIELD-EFFECT TRANSISTORS THIN-FILM-TRANSISTOR MOS2 GRAPHENE HETEROSTRUCTURES POLYMER PHOTOTRANSISTORS OPTOELECTRONICS ELECTRONICS MONOLAYER |
| DOI | 10.1088/1674-1056/26/3/037106 |
| 英文摘要 | Two-dimensional (2D) materials, such as graphene and MoS2 related transition metal dichalcogenides (TMDC), have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials, possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor (FET) structures with ferroelectric gate dielectric construction (termed FeFET). One type of device is for logic applications, such as a graphene and TMDC FeFET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material FeFET. |
| 源URL | [http://202.127.2.71:8080/handle/181331/12288]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Wang JL,Hu WD. Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors[J]. CHINESE PHYSICS B,2017,26(3). |
| APA | Wang JL,&Hu WD.(2017).Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors.CHINESE PHYSICS B,26(3). |
| MLA | Wang JL,et al."Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors".CHINESE PHYSICS B 26.3(2017). |
入库方式： OAI收割
来源：上海技术物理研究所
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