Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires
文献类型：期刊论文
| 作者 | Chen XR; Zhuang QD; Alradhi H; Jin ZM; Zhu LQ; Chen X; Shao J |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2017 |
| 卷号 | 17期号:3页码:1545-1551 |
| 关键词 | INFRARED PHOTOREFLECTANCE SUPERLATTICES LUMINESCENCE ALLOYS PHOTOVOLTAICS ACCUMULATION TEMPERATURE LINEWIDTHS TRANSPORT SURFACES |
| DOI | 10.1021/acs.nanolett.6b04629 |
| 英文摘要 | Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier-phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs. |
| 源URL | [http://202.127.2.71:8080/handle/181331/12289]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Chen XR,Zhuang QD,Alradhi H,et al. Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires[J]. NANO LETTERS,2017,17(3):1545-1551. |
| APA | Chen XR.,Zhuang QD.,Alradhi H.,Jin ZM.,Zhu LQ.,...&Shao J.(2017).Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires.NANO LETTERS,17(3),1545-1551. |
| MLA | Chen XR,et al."Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires".NANO LETTERS 17.3(2017):1545-1551. |
入库方式： OAI收割
来源：上海技术物理研究所
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