Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection
文献类型：期刊论文
| 作者 | Wang FF; Chen JX; Xu ZC; Zhou Y; He L |
| 刊名 | OPTICS EXPRESS
 |
| 出版日期 | 2017 |
| 卷号 | 25期号:3页码:1629-1635 |
| DOI | 10.1364/OE.25.001629 |
| 英文摘要 | In this paper, we report on the characterization of InAs/GaAsSb type-II superlattice long wavelength infrared photodiodes grown on InAs substrates by molecular-beam epitaxy and also present the device performance comparison with the superlattice devices grown on GaSb substrates. These devices with PIN structures had a 100% cutoff wavelength of 10 mu m. The dark current density of InAs-based device at -30 mV reverse bias was 4.01 x 10(-4) A/cm(2) and the resistance-area product at zero bias (R(0)A) was 36.9 Omega cm(2). The dark current density of GaSb-based device is higher more than one order of magnitude than that of InAs-based device. The temperature-dependence and bias-dependence of the dark current are studied experimentally and correlated to the theory. Good agreement was achieved between the measured I-V curves and the simulated ones, and between the experimental and theoretically predicted differential resistance values. Compared with InAs-based superlattice device, the generation-recombination current of GaSb-based device is larger and dominates in a wider temperature range due to shorter carrier lifetime and higher defect density. (C) 2017 Optical Society of America |
| 源URL | [http://202.127.2.71:8080/handle/181331/12290]  |
| 专题 | 上海技术物理研究所_上海技物所 |
| 作者单位 | Shanghai Inst Tech Phys |
| 推荐引用方式 GB/T 7714 | Wang FF,Chen JX,Xu ZC,et al. Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection[J]. OPTICS EXPRESS,2017,25(3):1629-1635. |
| APA | Wang FF,Chen JX,Xu ZC,Zhou Y,&He L.(2017).Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection.OPTICS EXPRESS,25(3),1629-1635. |
| MLA | Wang FF,et al."Performance comparison between the InAs-based and GaSb-based type-II superlattice photodiodes for long wavelength infrared detection".OPTICS EXPRESS 25.3(2017):1629-1635. |
入库方式： OAI收割
来源：上海技术物理研究所
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